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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F407IG датащи(PDF) 77 Page - STMicroelectronics |
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STM32F407IG датащи(HTML) 77 Page - STMicroelectronics |
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77 / 154 page  STM32F405xx, STM32F407xx Electrical characteristics Doc ID 022152 Rev 1 77/154 5.3.9 Internal clock source characteristics The parameters given in Table 29 and Table 30 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator Table 29. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. -- 1 % Factory- calibrated TA = –40 to 105 °C –8 - 4.5 % TA = –10 to 85 °C –4 - 4 % TA = 25 °C –1 - 1 % tsu(HSI) (3) 3. Guaranteed by design, not tested in production. HSI oscillator startup time -2.2 4 µs IDD(HSI) HSI oscillator power consumption -60 80 µA Table 30. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI (2) 2. Based on characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI) (3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI) (3) LSI oscillator power consumption - 0.4 0.6 µA |
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