STGWA45HF60WDI datasheet(4/16 Pages) STMICROELECTRONICS

номер детали	STGWA45HF60WDI

подробное описание детали	45 A, 600 V ultra fast IGBT with low drop diode

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGW45HF60WDI

4/16

Doc ID 16091 Rev 2

Electrical characteristics

(TJ = 25 °C unless otherwise specified).

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC= 30 A

VGE = 15V, IC = 30 A,TJ= 125 °C

1.9

1.65

2.5

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TJ = 125 °C

500

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

± 100

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

2900

260

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 400 V, IC = 30 A,

VGE = 15 V

Figure 18

160

Table 6.

Switching off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

tr(Voff)

td(off)

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 400 V, IC = 30 A,

RGE = 4.7 Ω, VGE = 15 V

Figure 17

145

tr(Voff)

td(off)

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 400 V, IC = 30 A,

RGE = 4.7 Ω, VGE =15 V,

TJ = 125 °C

Figure 17

185

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