MMBT7002K datasheet(2/2 Pages) DIOTEC

номер детали	MMBT7002K

подробное описание детали	N-Channel Enhancement Mode FET with protected Gate

PDF	2 Pages

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производитель	DIOTEC [Diotec Semiconductor]

домашняя страница	http://www.diotec.com

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MMBT7002K

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

ID = 10 µA

BVDSS

60 V

Drain-Source leakage current – Drain-Source Leckstrom

G short

VDS = 60 V

IDSS

1 µA

Gate-Source leakage current – Gate-Source Leckstrom

VGS = 20 V

±IGSS

10 µA

Gate-Threshold voltage – Gate-Source Schwellspannung

VGS = VDS, ID = 250 µA

VGS(th)

1 V

2.5 V

Drain-Source on-voltage – Drain-Source-Spannung

VGS = 10 V, ID = 500 mA

VGS = 5 V, ID = 50 mA

VDS(on)

3.75 V

1.5 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

VGS = 10 V, ID = 500 mA

VGS = 4.5 V, ID = 200 mA

RDS(on)

3 Ω

4 Ω

Forward Transconductance – Übertragungssteilheit

VDS ≥ 10 VDS(on), ID = 200 mA

gFS

80 mS

Input Capacitance – Eingangskapazität

VDS = 25 V, f = 1 MHz

Ciss

50 pF

Output Capacitance – Ausgangskapazität

VDS = 25 V, f = 1 MHz

Coss

25 pF

Reverse Transfer Capacitance – Rückwirkungskapazität

VDS = 25 V, f = 1 MHz

Crss

5 pF

Turn-On Time – Einschaltzeit

VDD= 30 V, RL= 150 Ω, ID= 0.2 A, VGS= 10 V, RG= 25 Ω

ton

20 ns

Turn-Off Delay Time – Ausschaltverzögerung

VDD= 30 V, RL= 150 Ω, ID= 0.2 A, VGS= 10 V, RG= 25 Ω

toff

20 ns

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