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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BY2000 датащи(PDF) 1 Page - Diotec Semiconductor |
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BY2000 датащи(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page  BY251 ... BY255, BY1600 ... BY2000 BY251 ... BY255, BY1600 ... BY2000 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2011-03-04 Dimensions - Maße [mm] Nominal Current Nennstrom 3 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 200...2000 V Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. Gewicht ca. 0.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BY251 200 200 BY252 400 400 BY253 600 600 BY254 800 800 BY255 1300 1300 BY1600 1600 1600 BY1800 1800 1800 BY2000 2000 2000 higher voltages see höhere Spannungen siehe BY4...BY16 4000...16000 4000...16000 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 50°C IFAV 3 A 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 20 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 100/110 A Rating for fusing, Grenzlastintegral, t < 10 ms TA = 25°C i2t 50 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 1.2±0.05 Ø 4.5+0.1 -0.3 |
Аналогичный номер детали - BY2000 |
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Аналогичное описание - BY2000 |
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