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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LPC1111 датащи(PDF) 36 Page - NXP Semiconductors |
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LPC1111 датащи(HTML) 36 Page - NXP Semiconductors |
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36 / 64 page  LPC1111_12_13_14 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 22 June 2011 36 of 64 NXP Semiconductors LPC1111/12/13/14 32-bit ARM Cortex-M0 microcontroller 9.3 Power consumption LPC111x/102/202/302 Power measurements in Active, Sleep, and Deep-sleep modes were performed under the following conditions (see LPC111x user manual): • Configure all pins as GPIO with pull-up resistor disabled in the IOCONFIG block. • Configure GPIO pins as outputs using the GPIOnDIR registers. • Write 0 to all GPIOnDATA registers to drive the outputs LOW. Fig 11. Deep power-down mode: Typical supply current IDD versus temperature for different supply voltages VDD (for LPC111x/101/201/301) 002aaf457 0.2 0.6 0.4 0.8 IDD ( μA) 0 temperature ( °C) −40 85 35 10 60 −15 VDD = 3.6 V 3.3 V 2.0 V 1.8 V |
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