STF8N65M5 datasheet(3/25 Pages) STMICROELECTRONICS

номер детали	STF8N65M5

подробное описание детали	N-channel 650 V, 0.56 Ω, 7 A MDmesh??V Power MOSFET

PDF	25 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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3 / 25 page

STB/D/F/I/P/U8N65M5

Electrical ratings

Doc ID 16531 Rev 3

3/25

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220,

D²PAK

I²PAK

IPAK

DPAK,

TO-220FP

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

7 (1)

Limited only by maximum temperature allowed.

Drain current (continuous) at TC = 100 °C

4.4

4.4 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

28 (1)

PTOT

Total dissipation at TC = 25 °C

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

120

dv/dt (3)

ISD ≤ 7A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

IPAK TO-220 I²PAK D²PAK

TO-220FP

Rthj-case

Thermal resistance

junction-case max

1.79

°C/W

Rthj-amb

Thermal resistance

junction-ambient max

100

62.5

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4 board, 2oz Cu.

Thermal resistance

junction-pcb max

°C/W

Maximum lead

temperature for soldering

purpose

300

°C

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