TSM2N60CPRO datasheet(2/8 Pages) TSC

2 / 8 page

TSM2N60

600V N-Channel Power MOSFET

2/8

Version: E11

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance - Junction to Case

TO-251 / TO-252

RӨJC

2.87

oC/W

TO-220

2.32

Thermal Resistance - Junction to Ambient

TO-251 / TO-252

RӨJA

110

oC/W

TO-220

62.5

Notes: Surface mounted on FR4 board t ≤ 10sec

Electrical Specifications (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

600

Drain-Source On-State Resistance

VGS = 10V, ID = 1A

RDS(ON)

4.4

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.0

4.0

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

± 100

Forward Transconductance

VDS = 40V, ID = 1A

gfs

Diode Forward Voltage

IS = 2A, VGS = 0V

VSD

1.6

Dynamic

Total Gate Charge

VDS = 400V, ID = 2A,

VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

435

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

9.2

Switching

Turn-On Delay Time

VGS = 10V, ID = 2A,

VDD = 300V, RG = 18

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes:

Pulse test: pulse width <=300uS, duty cycle <=2%

For design reference only, not subject to production testing.

Switching time is essentially independent of operating temperature.

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