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TSC5302DCPROG датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSC5302DCPROG
подробное описание детали  High Voltage NPN Transistor with Diode
PDF  6 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
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TSC5302DCPROG датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSC5302D
High Voltage NPN Transistor with Diode
2/6
Version: F10
Electrical Specifications (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
a
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
10
--
--
V
Collector Cutoff Current
VCB = 700V, IE = 0
ICBO
--
--
1
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
--
1
uA
Collector-Emitter Saturation Voltage
a
IC =0.5A, IB =0.1A
VCE(SAT)1
--
--
0.5
V
IC =1A, IB =0.25A
VCE(SAT)2
--
1.1
1.5
Base-Emitter Saturation Voltage
a
IC =0.5A, IB =0.1A
VBE(SAT)1
--
--
1.1
V
IC =1A, IB =0.25A
VBE(SAT)2
--
--
1.2
DC Current Gain
VCE =5V, IC =10mA
hFE 1
10
--
--
VCE =5V, IC =400mA
hFE 2
10
--
30
VCE =5V, IC =1A
hFE 3
5
--
--
Turn On Time
VCC =250V, IC =1A,
IB1=IB2 =0.2A, tp =25uS
Duty Cycle<1%
tON
--
0.15
0.3
uS
Storage Time
tSTG
--
0.5
0.9
uS
Fall Time
tf
--
0.2
0.4
uS
Diode
Fall Time
IC =1A
tF
--
--
800
uS
Forward Voltage Drop
IC =1A
Vf
--
--
1.4
V
Notes:
a. Pulsed duration = 300uS, duty cycle ≤2%



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