TSC236 datasheet(2/6 Pages) TSC

номер детали	TSC236

подробное описание детали	High Voltage NPN Transistor

PDF	6 Pages

Scroll/Zoom	100%

производитель	TSC [Taiwan Semiconductor Company, Ltd]

домашняя страница	http://www.taiwansemi.com

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2 / 6 page

TSC236

High Voltage NPN Transistor

2/6

Version: A07

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC =1mA, IB =0

BVCBO

700

Collector-Emitter Breakdown Voltage

IC =10mA, IE =0

BVCEO

400

Emitter-Base Breakdown Voltage

IE =0.1mA, IC =0

BVEBO

Collector Cutoff Current

VCE =400V, IB=0

ICEO

250

Collector Cutoff Current

VCB =700V, IE =0

ICBO

Emitter Cutoff Current

VEB = 9V, IC =0

IEBO

Collector-Emitter Saturation Voltage

IC=0.8A, IB =0.1A

IC=2.5A, IB =0.6A

VCE(SAT)1

VCE(SAT)2

1.1

1.3

Base-Emitter Saturation Voltage

IC=1A, IB =0.2A

IC=2.5A, IB =0.5A

VBE(SAT)1

VBE(SAT)2

1.2

1.3

DC Current Gain

VCE =5V, IC = 10mA

VCE =5V, IC = 2.5A

hFE

Dynamic

Frequency

VCE =10V, IC =0.5A

MHz

Output Capacitance

VCB =10V, f =0.1MHz

Cob

Resistive Load

Turn On Time

tON

0.2

0.5

Storage Time

tSTG

2.2

Fall Time

VCC =125V, IC =2A,

IB1 =IB2=0.4A, tP =25uS

Duty Cycle ≤1%

0.2

0.5

Note: pulse test: pulse width ≤ 300uS, duty cycle ≤ 2%

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