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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TS19450CSRL датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS19450CSRL датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TS19450 AC/DC WLED Driver with External MOSFET Universal High Brightness 2/8 Version: A10 Electrical Specifications (TA= 25oC, VIN= 12V, unless otherwise noted) Function Parameter Symbol Test Conditions Min Typ Max Units Input DC Input Voltage Range VINDC DC input voltage 8.0 -- 450 V Shut-down Mode Supply Current IINSD Pin PWMD to GND -- 0.5 1.0 mA Internal Regulator Internally Regulated Voltage VDD VIN=8V, IDD(EXT)=0, 500pF at Gate, RT=226kΩ, PWMD=VDD 7.0 7.5 8.0 V Line Regulation of VDD ∆VDDLine VIN=8~450V, IDD(EXT)=0, 500pF at Gate, RT=226kΩ, PWMD=VDD 0 -- 1.0 V Load Regulation of VDD ∆VDDLoad IDD(EXT)=0~1mA, 500pF at Gate, RT=226kΩ, PWMD=VDD 0 -- 100 mV Undervoltage Lockout Threshold UVLO VDD rising 6.45 6.7 6.95 V Undervoltage Lockout Hysteresis ∆UVLO VDD falling -- 500 -- mV VDD current available for external circuitry VDD (EXT) VIN=8V~100V -- -- 1.0 mA Dimming PWMD Input Low Voltage VENL VIN=8V~450V -- -- 1.0 V PWMD Input High Voltage VENH VIN=8V~450V 2.4 -- -- V PWMD Pull-down resistance at PWMD REN VPWMD=5V 50 100 150 kΩ Linear Dimming pin voltage VLD VIN=12V 0 -- 250 mV Current Sense Comparator -40ºC < TA < +85ºC 225 250 275 Current Sense Pull-in Threshold Voltage VCSTH TA < +125ºC 213 250 287 mV Offset Voltage for LD Comparator VOFFSET -12 -- 12 mV Current Sense Blanking Interval TBLANK VLD=VDD , VCS=0.55VLD 150 215 280 nS Delay to Output TDELAY VIN=12V, VLD=0.15V, VCS=0~0.22V after TBLANK -- -- 300 nS Oscillator RT=1MΩ 20 25 30 Oscillator Frequency fOSC RT=223kΩ 80 100 120 kHz Max. Oscillator PWM Duty Cycle DMAX F=25kHz at Gate, CS to GND -- -- 100 % Gate Driver Gate Sourcing Current ISOURCE VGATE=0V, VDD=7.5V 165 -- -- mA Gate Sinking Current ISINK VGATE=VDD, VDD=7.5V 165 -- -- mA Gate high output voltage VGATE(HI) IOUT=-10mA VDD- 0.3 -- VDD V Gate low output voltage VGATE(LO) IOUT=10mA 0 -- 0.3 V Gate output Rise Time TRISE CGATE=500pF, 10%~90% VGATE -- 30 50 nS Gate Output Fall Time TFALL CGATE=500pF, 90%~10% VGATE -- 30 50 nS Note 1: Limited by package power dissipation, whichever is lower Note 2: VDD load current external to the TS19450 Note 3: Denotes the specifications which apply over the full operating ambient temperature range of -40ºC<TA<+125ºC |
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