SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

BUR50

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 6522

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 50mA

125

V

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = 1.0mA

10

ICEO

Collector Cut-Off Current

VCE = 125V

IB = 0

1.0

VCB = 200V

IE = 0

0.2

ICBO

Collector Cut-Off Current

TC = 125°C

2

IEBO

Emitter Cut-Off Current

VEB = 7V

IC = 0

0.2

mA

IC = 35A

IB = 2A

1.0

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 70A

IB = 7A

0.8

1.5

IC = 35A

IB = 2A

1.8

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 70A

IB = 7A

1.6

2

V

IC = 5A

VCE = 4V

20

140

hFE

(1)

Forward-current transfer

ratio

IC = 50A

VCE = 4V

15

DYNAMIC CHARACTERISTICS

IC = 1.0A

VCE = 5V

fT

Transition Frequency

f = 1.0MHz

10

16

MHz

IC = 70A

VCC = 60V

ton

Turn-On Time

IB1 = 7A

0.5

1.2

ts

Storage Time

IC = 70A

VCC = 60V

0.82

2

tf

Fall Time

IB1 = -IB2 = 7A

0.1

0.5

µs

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%