SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

BUP52

Semelab

Semelab

Semelab

Semelab Limited

Limited

Limited

Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8313

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

VCE = 300V

VBE = -1.5V

0.1

ICEX

Collector Cut-Off Current

TC = 150°C

5

IEBO

Emitter Cut-Off Current

VEB = 8V

IC = 0

0.1

mA

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

200

IC = 20A

IB = 2A

0.5

IC = 40A

IB = 4A

0.6

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 70A

IB = 14A

0.9

IC = 20A

IB = 2A

1.1

IC = 40A

IB = 5A

1.2

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 70A

IB = 15A

1.5

V

IC = 20A

VCE = 4V

20

IC = 40A

VCE = 4V

12

hFE

(1)

Forward-current transfer

ratio

IC = 70A

VCE = 4V

8

DYNAMIC CHARACTERISTICS

ts

Storage Time

IC = 40A

VCC = 200V

1.0

tf

Fall Time

IB1 = -IB2 = 10A

0.3

µs

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%