HIGH CURRENT GENERAL

PURPOSE TRANSISTOR

BFX34

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 5569

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)CBO

(1)

Collector-Base

Breakdown Voltage

IC = 5mA

VBE = 0

120

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

IB = 0

60

VEBO

(1)

Emitter - Base Voltage

IE = 1.0mA

IC = 0

6

VCE(sat)

(1)

Collector-Emitter

Saturation Voltage

0.4

1.0

VBE(sat)

(1)

Base-Emitter

Saturation Voltage

IC = 5A

IB = 0.5A

1.3

1.6

V

ICES

Collector Cut-Off Current

VCE = 60V

VBE = 0

0.02

10

IEBO

Emitter Cut-Off Current

VEB = 4V

IC = 0

0.05

10

µA

IC = 1.0A

VCE = 2V

100

IC = 1.5A

VCE = 0.6V

75

hFE

DC Current Gain

IC = 2A

VCE = 2V

40

80

150

-

DYNAMIC CHARACTERISTICS

IC = 0.5A

VCE = 5V

fT

Transition Frequency

f = 20MHz

70

100

MHz

Cobo

Output Capacitance

VCB = 10V

f = 1.0MHz

40

100

Cibo

Input Capacitance

VEB = 0.5V

f = 1.0MHz

300

500

pF

ton

Turn on Time

VCC = 20V

IC = 0.5A

0.6

toff

Turn off Time

IB1= -IB2 = 50mA

1.2

µS

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%