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BDS10 датащи(PDF) 2 Page - Seme LAB

номер детали BDS10
подробное описание детали  SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES
PDF  2 Pages
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производитель  SEME-LAB [Seme LAB]
домашняя страница  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BDS10 датащи(HTML) 2 Page - Seme LAB

  BDS10 Datasheet HTML 1Page - Seme LAB BDS10 Datasheet HTML 2Page - Seme LAB  
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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3254
Issue 3
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
BDS10
BDS10SMD
BDS10SMD05
BDS11
BDS11SMD
BDS11SMD05
BDS12
BDS12SMD
BDS12SMD05
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BDS10
VCB = 60V
BDS11
VCB = 80V
BDS12
VCB = 100V
BDS10
VCE = 30V
BDS11
VCE = 40V
BDS12
VCE = 50V
VEB = 5V
BDS10
BDS11
IC = 100mA
BDS12
IC = 5A
IB = 0.5A
IC = 10A
IB = 2.5A
IC = 10A
IB = 2.5A
IC = 5A
VCE = 4V
IC = 0.5A
VCE = 4V
IC = 5A
VCE = 4V
IC = 10A
VCE = 4V
IC = 0.5A
VCE = 4V
f = 1MHz
500
500
500
1.0
1.0
1.0
1.0
60
80
100
1.0
3
2.5
1.5
40
250
15
150
5
3
µA
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulsed : Pulse duration = 300
µs , duty cycle = 1.5%
Parameter
Test Conditions
Max.
Unit
ton
ts
tr
On Time
(td + tr)
Storage Time
Fall Time
IC = 4A
VCC = 30V
IB1 = 0.4A
IC = 4A
VCC = 30V
IB1 = –IB2 = 0.4A
0.7
1.0
0.8
µs
µs
µs
SWITCHING CHARACTERISTICS
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE(sat)*
VBE*
hFE*
fT
Collector cut-off current
(IE = 0)
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IC = 0)
Collector - Emitter
sustaining voltage (IB = 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current Gain
Transition frequency
Test Conditions
Max.
Unit
RθJ-C
Thermal Resistance Junction to Case
4.0
°C/W
THERMAL CHARACTERISTICS



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