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MBRF1035CT датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

номер детали MBRF1035CT
подробное описание детали  10.0 AMPS. Isolated Schottky Barrier Rectifiers
PDF  2 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF1035CT датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
UL Recognized File # E-326243
Low power loss, high efficiency
High current capability, low forward voltage drop
Guard-ring for overvoltage protection
Mechanical Data
MBRF10XXCT = Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBRF
1035
CT
MBRF
1045
CT
MBRF
1050
CT
MBRF
1060
CT
MBRF
1090
CT
MBRF
10100
CT
MBRF
10150
CT
MBRF
10200
CT
Unit
VRRM
35
45
50
60
90
100
150
200
V
VRMS
24
31
35
42
63
70
105
140
V
VDC
35
45
50
60
90
100
150
200
V
IRRM
A
dV/dt
V/us
RθjC
OC/W
TJ
OC
TSTG
OC
0.5
5
3.5
0.85
0.67
0.75
0.1
0.70
0.90
10000
mA
V
10
10
120
0.88
0.78
0.98
0.88
A
IF(AV)
A
IFSM
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, TA=25℃
IF=5A, TA=125℃
IF=10A, TA=25℃
IF=10A, TA=125℃
VF
0.80
IFRM
0.80
0.65
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Weight: 1.74 grams
Typical Thermal Resistance Per Leg
Type Number
A
Green compound with suffix "G" on packing
code & prefix "G" on datecode
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Maximum Reverse Current @ Rated VR T A=25 ℃
T A=125 ℃
Polarity: As marked
Mounting torque: 5 in. - lbs, max
Mounting position:Any
MBRF1035CT - MBRF10200CT
Marking Diagram
ITO-220AB
10.0 AMPS. Isolated Schottky Barrier Rectifiers
Dimensions in inches and (millimeters)
Case:ITO-220AB molded plastic body
Features
High surge capability
Metal silicon junction, majority carrier conduction
High temperature soldering guaranteed:
260℃/10 seconds, at terminals
Version:I11
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Note 1: 2.0uS Pulse Width, f=1.0KHz
Operating Temperature Range
Storage Temperature Range
- 65 to + 150
- 65 to + 150
Voltage Rate of Change (Rated V R)
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Repetitive Reverse Surge Current (Note 1)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Average Forward Rectified Current
at Tc=133℃
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=133 ℃
IR
15
10
0.57
0.95
0.75
0.85
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE


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