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BAV99S датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BAV99S датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 3 page ![]() BAV99S 250mW High Speed Switching Array Small Signal Diode Electrical Characteristics IR= 2.5μA IF= 1.0mA IF= 10mA IF= 50mA IF= 100mA IF= 150mA VR= 75mA Junction Capacitance VR=0, f=1.0MHz - Notes:2. Reverse Recovery Test Conditions: I =I =10mA, R =100Ω Tape & Reel specification Sprocke hole position E 1.75 ±0.10 W 8.10 ±0.20 P0 4.00 ±0.10 Punch hole position Sprocke hole pitch Tape width 3.15 ±0.10 55 Min Feed hole width 2.77 ±0.10 D2 13.0 ± 0.20 Item Symbol Reel inner diameter Carrier depth C D1 Carrier length B Reel outside diameter Sprocket hole Dimension (mm) Carrier width A F 3.50 ±0.05 1.22 ±0.10 1.50 ± 0.10 D 178 ± 1 d Reel width Embossment center Overall tape thickness 12.30 ±0.20 2.00 ±0.05 0.229 ±0.013 W1 P1 T Units Reverse Breakdown Voltage V(BR) 75 - V Type Number Symbol Min Max VF - 0.715 1.250 V Forward Voltage - 0.855 - 1.000 - 1.200 - Reverse Leakage Current IR -1 uA CJ - 1.5 pF 4ns Reverse Recovery Time (Note 2) Trr Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label W1 D1 D2 D T C d P1 P0 A B F W E Direction of Feed Version : B11 |
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