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RFPA0133 датащи(PDF) 2 Page - RF Micro Devices

номер детали RFPA0133
подробное описание детали  3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
PDF  8 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPA0133 датащи(HTML) 2 Page - RF Micro Devices

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RFPA0133
DS100803
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.25
VDC
Power Down Voltage (VPD)
-0.5 to +3.3
V
VBIAS
-0.5 to +3.3
V
DC Supply Current
500
mA
Input RF Power
+10
dBm
Output Load VSWR (See Note)
6:1
Ambient Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Note: Due to high efficiency of this PA, the maximum ICC should always be
less than 400mA. Only under short term poor VSWR conditions is 500mA
acceptable.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VCC=3.6V, VPD=VBIAS=3.0V,
PIN=0dBm, Freq=915MHz
CW Output Power
27.5
dBm
VCC=3.6V
CW Output Power
30
dBm
VCC=5V
Small Signal Gain
32
dB
PIN=-10dBm
Second Harmonic
23
dBc
Without external second harmonic trap
Third Harmonic
45
dBc
CW Efficiency
55
63
%
G16=“high”, G8=“high”, PIN=0dBm
Power Down “ON”
3.0
V
Voltage supplied to the input
Power Down “OFF”
0
0.5
0.8
V
Voltage supplied to the input
VPD Input Current
6
mA
Only in “ON” state
G16, G8 “ON”
1.7
3.0
V
Voltage supplied to the input
G16, G8 “OFF”
0
0.7
V
Voltage supplied to the input
G16, G8 Input Current
1.0
mA
Only in “ON” state
Output Power
26.5
27.5
29
dBm
G16=“high”, G8=“high”, PIN=0dBm
21
23
25
dBm
G16=“high”, G8=“low”, PIN=0dBm
14
16
18
dBm
G16=“low”, G8=“high”, PIN=0dBm
3
5
8
dBm
G16=“low”, G8=“low”, PIN=0dBm
Turn On/Off Time
200
ns
Power Supply
Power Supply Voltage
3.6
V
Specifications
Power Supply Current
230
mA
G16=“high”, G8=“high”, PIN=0dBm
150
mA
G16=“high”, G8=“low”, PIN=0dBm
65
mA
G16=“low”, G8=“high”, PIN=0dBm
35
mA
G16=“low”, G8=“low”, PIN=0dBm
Idle Current
40
75
110
mA
G16=“high”, G8=“high”, No RF In
60
200
nA
G16=“low”, G8=“low”, PD=“low”. No RF IN.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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