16M (1M × 16, 2M × 8) Flash Memory

LH28F016LL

3

PIN DESCRIPTION

SYMBOL

TYPE

NAME AND FUNCTION

A

0

INPUT

BYTE-SELECT ADDRESS:

Selects between high and low byte when device is in x8

mode. This address is latched in x8 Data Writes. Not used in x16 mode (i.e., the A

0

input buffer is turned off when BYTE is high).

A

INPUT

WORD-SELECT ADDRESSES:

Select a word within one 64K block. A

1 of 1024 rows, and A

latched during Data Writes.

A

INPUT

BLOCK-SELECT ADDRESSES:

Select 1 of 32 Erase blocks. These addresses are

latched during Data Writes, Erase and Lock-Block operations.

DQ

INPUT/OUTPUT

LOW-BYTE DATA BUS:

Inputs data and commands during CUI write cycles.

Outputs array, buffer, identifier or status data in the appropriate Read mode. Floated

when the chip is de-selected or the outputs are disabled.

DQ

INPUT/OUTPUT

HIGH-BYTE DATA BUS

: Inputs data during x16 Data-Write operations. Outputs

array, buffer or identifier data in the appropriate Read mode; not used for Status

register reads. Floated when the chip is de-selected or the outputs are disabled.

CE

»

INPUT

CHIP ENABLE INPUTS

: Activate the device’s control logic, input buffers, decoders and

sense amplifiers. With either CE

»

consumption reduces to Standby levels upon completion of any current Data-Write or

Erase operations. Both CE

»

falling edge of CE

»

RP

»

INPUT

RESET/POWER-DOWN:

RP

circuits that burn static power, even those circuits enabled in standby mode, are turned

off. When returning from Deep Power-Down, a recovery time of 5 ns is required to

allow these circuits to power-up for Read mode, and another 395 ns is required to enter

Program or Erase mode. When RP

are terminated, and the device is reset. All Status registers return to ready (with all

status flags cleared).

OE

»

INPUT

OUTPUT ENABLE:

Gates device data through the output buffers when low. The

outputs float to tri-state off when OE

NOTE:

CE

»

WE

INPUT

WRITE ENABLE:

Controls access to the CUI, Page Buffers, Data Queue Registers

and Address Queue Latches. WE is active low, and latches both address and data

(command or array) on its rising edge.

RY

OPEN DRAIN

OUTPUT

READY/BUSY:

Indicates status of the internal WSM. When low, it indicates that the

WSM is busy performing an operation. RY

for new operations (or WSM has completed all pending operations), or Erase is

Suspended, or the device is in deep power-down mode. This output is always active

(i.e., not floated to tri-state off when OE

Pin Disable command is issued.