BAS116 datasheet(1/2 Pages) MCC

номер детали	BAS116

подробное описание детали	225mW Switching Diode

PDF	2 Pages

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производитель	MCC [Micro Commercial Components]

домашняя страница	http://www.mccsemi.com

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BAS116

225mW Switching

Diode

Features

•

Power dissipation: 225mW (Tamb=25 )

•

Forward current:200mA

Maximum Ratings

•

Operating Temperature: -55

to +150

•

Storage Temperature: -55

to +150

Electrical Characteristics @ 25

°C Unless Otherwise Specified

Reverse Voltage

VR

75V

IR=100

A

Maximum

Instantaneous

Forward Voltage

VF

0.9V

1.0V

1.1V

1.25V

IFM =1mA;

IFM =10mA;

IFM =50mA;

IFM =150mA;

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

IR

5.0nA

VR=75Volts

Diode Capacitance

CD

2pF

Measured at 1.0MHz,

VR=0V

Reverse Recovery

Time

Trr

3

s

SOT-23

Suggested Solder

Pad Layout

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.110

.120

2.80

3.04

B

.083

.098

2.10

2.64

C

.047

.055

1.20

1.40

D

.035

.041

.89

1.03

E

.070

.081

1.78

2.05

F

.018

.024

.45

.60

G

.0005

.0039

.013

.100

H

.035

.044

.89

1.12

J

.003

.007

.085

.180

K

.015

.020

.37

.51

A

B

C

D

E

F

G

H

J

.079

2.000

inches

mm

.031

.800

.035

.900

.037

.950

.037

.950

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

MCC

www.mccsemi.com

Revision:

A

20

11/01/01

TM

Micro Commercial Components

Marking: JV

1 of 2

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

Аналогичный номер детали - BAS116

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BAS116	52Kb / 8P	Low-leakage diode 1999 May 26
Siemens Semiconductor G...	BAS116	98Kb / 4P	Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)
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Infineon Technologies A...	BAS116	444Kb / 4P	Silicon Low Leakage Diode Mar-10-2004
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Аналогичное описание - BAS116

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Taiwan Semiconductor Co...	BAS16	96Kb / 2P	225mW SMD Switching Diode
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