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Midium Power Transistors (-50V / -1A)

MP6T12



Structure



Dimensions (Unit : mm)

PNP Silicon epitaxial planar transistor



Features

1) Low saturation voltage, typically

2) High speed switching



Applications

High Speed Switching



Inner circuit (Unit : mm)



Packaging specifications

Package

MPT6

Code

TR

Basic ordering unit (pieces)

1000



Absolute maximum ratings (Ta = 25

C)

　

<It is the same ratings for the Tr.1 and Tr.2>

Symbol

Limits

Collector-base voltage

-50

Collector-emitter voltage

-50

Emitter-base voltage

-6

-1

-2

2.0

1.4

Junction temperature

150

Range of storage temperature

-55 to +150

*1 Pw=10ms, Single Pulse

V

V

Unit

Collector current

Pulsed

DC

Parameter

Low Frequency Amplifier

C

C

W/Element

W/Total

A

A

Power dissipation

Type

V

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

MPT6

(1)

(2)

(3)

(6)

(5)

(4)

*1

*2

*2

(1)

(2)

(3)

(4)

(5)

(6)

1/5

2010.07 - Rev.A