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4V Drive Nch + Nch MOSFET

MP6K31



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Built-in G-S Protection Diode.

2) Small Surface Mount Package (MPT6).

3) Low voltage drive. (4V)



Application

Switching



Packaging specifications



Inner circuit

Package

Taping

Code

TR

Basic ordering unit (pieces)

1000

MP6K31

○



Absolute maximum ratings (Ta = 25

C)

<It is the same ratings for Tr1 and Tr2.>

Symbol

Limits

Unit

Drain-source voltage

60

V

Gate-source voltage

20

V

Continuous

2A

Pulsed

8A

Continuous

1.2

A

Pulsed

8A

2.0

W / TOTAL

1.4

W / ELEMENT

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to +150

C

*1 Pw

10s, Duty cycle1%

*2 Mounted on a ceramic board.

Type

Source current

(Body Diode)

Drain current

Parameter

Power dissipation

(6)

(4)

(5)

(1)

(3)

(2)

(1)

(2)

(3)

(4)

(5)

(6)

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

∗

1 ESD PROTECTION DIODE

∗

2 BODY DIODE

*2

*1

*1

MPT6

(Dual)

(1)

(2)

(3)

(6)

(5)

(4)

1/6

2010.09 - Rev.A