Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

4V Drive Nch + Nch MOSFET

MP6K11



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Low on-resistance.

2) High power package(MPT6).

3) Low voltage drive(4V drive).



Application

Switching



Packaging specifications



Inner circuit

Package

Taping

Code

TCR

Basic ordering unit (pieces)

1000

MP6K11





Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

30

V

Gate-source voltage

20

V

Continuous

3.5

A

Pulsed

12

A

Continuous

1.6

A

Pulsed

12

A

2.0

W / TOTAL

1.4

W / ELEMENT

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to 150

C

*1 Pw

10s, Duty cycle1%

*2 Mounted on a ceramic board.

Type

Source current

(Body Diode)

Drain current

Parameter

Power dissipation

MPT6

(Duel)

(1)

(2)

(3)

(6)

(5)

(4)

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

∗

1 ESD PROTECTION DIODE

∗

2 BODY DIODE

*2

*1

*1

∗2

∗2

∗1

∗1

(1)

(2)

(3)

(6)

(5)

(4)

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2011.04 - Rev.A