Data Sheet

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Midium Power Transistors (120V / 700mA)

2SCR372P



Structure



Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor



Features

Low saturation voltage



Applications

Driver



Inner circuit(Unit : mm)

Package

Taping

Code

T100

Basic ordering unit (pieces)

1000

2SCR372P



hFE values are classified follows :

Item

Q

R

hFE

120 to 270 180 to 390



Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Collector-base voltage

120

V

Collector-emitter voltage

120

V

Emitter-base voltage

6V

DC

0.7

A

Pulsed

1.4

A

0.5

W

2W

Junction temperature

150

C

Range of storage temperature

55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm)



Packaging specifications

Type

Parameter

Collector current

Power dissipation

MPT3

(1)

(2)

(3)

*1

*2

*3

Abbreviated symbol : GX

(1) Base

(2) Collector

(3) Emitter

(1)

(3)

(2)

(1) Base

(2) Collector

(3) Emitter

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2011.04 - Rev.A