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BCP54TA датащи(PDF) 2 Page - Diodes Incorporated

номер детали BCP54TA
подробное описание детали  NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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BCP54TA датащи(HTML) 2 Page - Diodes Incorporated

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BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
2 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCP 54 / 55 / 56
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
BCP54
BCP55
BCP56
Unit
Collector-Base Voltage
VCBO
45
60
100
V
Collector-Emitter Voltage
VCEO
45
60
80
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Collector Current
ICM
2
Continuous Base Current
IB
100
mA
Peak Pulse Base Current
IBM
200
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
PD
2
W
Thermal Resistance, Junction to Ambient (Note 4)
RθJA
62
°C/W
Thermal Resistance, Junction to Leads (Note 5)
RθJL
19.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes:
4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).



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