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ZXLD1370EST16TC датащи(PDF) 21 Page - Diodes Incorporated

номер детали ZXLD1370EST16TC
подробное описание детали  60V HIGH ACCURACY BUCK/BOOST/BUCK-BOOST LED DRIVER-CONTROLLER WITH AEC-Q100
PDF  36 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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ZXLD1370EST16TC датащи(HTML) 21 Page - Diodes Incorporated

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ZXLD1370
ZXLD1370
Document number: DS32165 Rev. 4 - 2
21 of 36
www.diodes.com
March 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Applications Information (Continued)
Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum
frequency allowed in this condition is:
tPERIOD = 20*dt
f = 1/ tPERIOD = 515kHz
This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09K is
recommended to be used with the ZXLD1370 for frequencies from 300kHz to 500kHz).
The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1370 is less than 30nC.
Junction temperature estimation
Finally, the ZXLD1370 junction temperature can be estimated using the following equations:
Total supply current of ZXLD1370:
IQTOT ≈ IQ + f • QG
Where IQ = total quiescent current IQ-IN + IQ-AUX
Power consumed by ZXLD1370
PIC = VIN • (IQ + f • Qg)
Or in case of separate voltage supply, with VAUX < 15V
PIC = VIN • IQ-IN + Vaux • (IQ-AUX + f • Qg)
TJ =
TA + PIC • θJA =
TA + PIC • (θJC + θCA)
Where the total quiescent current IQTOT consists of the static supply current (IQ) and the current required to charge and
discharge the gate of the power MOSFET. Moreover the part of thermal resistance between case and ambient depends on
the PCB characteristics.
0
0.5
1
1.5
2
2.5
-40
-25
-10
5
2035506580
95
110
125
Ambient temperature (°C)
Figure 27. Power derating curve for ZXLD1370 mounted on test board according to JESD51



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