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ZXLD1370EST16TC датащи(PDF) 21 Page - Diodes Incorporated |
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ZXLD1370EST16TC датащи(HTML) 21 Page - Diodes Incorporated |
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21 / 36 page ![]() ZXLD1370 ZXLD1370 Document number: DS32165 Rev. 4 - 2 21 of 36 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Applications Information (Continued) Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum frequency allowed in this condition is: tPERIOD = 20*dt f = 1/ tPERIOD = 515kHz This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09K is recommended to be used with the ZXLD1370 for frequencies from 300kHz to 500kHz). The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1370 is less than 30nC. Junction temperature estimation Finally, the ZXLD1370 junction temperature can be estimated using the following equations: Total supply current of ZXLD1370: IQTOT ≈ IQ + f • QG Where IQ = total quiescent current IQ-IN + IQ-AUX Power consumed by ZXLD1370 PIC = VIN • (IQ + f • Qg) Or in case of separate voltage supply, with VAUX < 15V PIC = VIN • IQ-IN + Vaux • (IQ-AUX + f • Qg) TJ = TA + PIC • θJA = TA + PIC • (θJC + θCA) Where the total quiescent current IQTOT consists of the static supply current (IQ) and the current required to charge and discharge the gate of the power MOSFET. Moreover the part of thermal resistance between case and ambient depends on the PCB characteristics. 0 0.5 1 1.5 2 2.5 -40 -25 -10 5 2035506580 95 110 125 Ambient temperature (°C) Figure 27. Power derating curve for ZXLD1370 mounted on test board according to JESD51 |
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