MMBD5004S

Document number: DS30832 Rev. 8 - 2

2 of 4

www.diodes.com

May 2011

© Diodes Incorporated

MMBD5004S

Characteristic

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

400

V

Working Peak Reverse Voltage

DC Blocking Voltage

350

V

RMS Reverse Voltage

247

V

Forward Continuous Current (Note 4)

300

mA

Peak Repetitive Forward Current (Note 4)

625

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

μs

@ t = 1.0ms

5

3

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4) (See figure 1)

350

mW

Thermal Resistance Junction to Ambient Air (Note 4)

357

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 5)

400

⎯

⎯

V

Forward Voltage

⎯

⎯

⎯

⎯

0.9

1.05

1.275

V

Reverse Current (Note 5)

⎯

⎯

⎯

150

5

nA

μA

Total Capacitance

⎯

0.65

2.0

pF

Reverse Recovery Time

⎯

⎯

50

ns

Notes:

4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

400

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve, Total Package

A

200

100

300

0

500

0

30

60

90

120

150

100

1

10

0.1

1,000

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics, Per Element

F

0

0.2

0.4

0.6

0.8

1.0

1.2

T = 150 C

J

°

T = 1

C

J

25

°

T =

C

J

85

°

T = 25 C

J

°

T =

5 C

J

-5

°