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TIP50 датащи(PDF) 4 Page - ON Semiconductor

номер детали TIP50
подробное описание детали  High Voltage NPN Silicon Power Transistors
PDF  6 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP50 датащи(HTML) 4 Page - ON Semiconductor

  TIP50 Datasheet HTML 1Page - ON Semiconductor TIP50 Datasheet HTML 2Page - ON Semiconductor TIP50 Datasheet HTML 3Page - ON Semiconductor TIP50 Datasheet HTML 4Page - ON Semiconductor TIP50 Datasheet HTML 5Page - ON Semiconductor TIP50 Datasheet HTML 6Page - ON Semiconductor  
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TIP47G, TIP48G, TIP50G
http://onsemi.com
4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
20
5.0
50
500
Figure 5. Active Region Safe Operating Area
0.02
0.05
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25
°C
BONDING WIRE LIMITED
1.0ms
dc
100
ms
0.2
0.1
5.0
2.0
CURVES APPLY
BELOW RATED VCEO
1.0
0.5
100
200
500
ms
TC ≤ 25°C
TIP47
TIP48
TIP50
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.02
0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
2.0
ts
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
tf
IC, COLLECTOR CURRENT (AMPS)
+4.5
+3.5
+2.5
+1.5
0
-0.5
-1.5
-2.5
*APPLIES FOR IC/IB ≤ hFE/5
qVC FOR VCE(sat)
qVB FOR VBE
Figure 7. Temperature Coefficients
0.02
0.05
0.1
0.2
0.5
1.0
2.0
+25
°C to +150°C
-55
°C to +25°C
+25
°C to +150°C
-55
°C to +25°C
+0.5
Figure 8. Inductive Load Switching
Note A: Input pulse width is increased until ICM = 0.63 A.
INPUT
50
MJE171
RBB1 =
150
W
100 mH
RBB2 =
100
W
VBB2 =
0
VBB1 = 10 V
VCE MONITOR
TUT
VCC = 20 V
IC MONITOR
RS =
0.1
W
50
0.63 A
0 V
-5 V
tw ≈ 3 ms
(SEE NOTE A)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
VCER
0 V
10 V
100 ms
VCE(sat)



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