(Ta=25˚C)

mA

A

4V

PmW

˚C

˚C

260

˚C

High Speed Infrared Emitting Diode

Features

Applications

Outline Dimensions

(Unit : mm)

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Forward current

Peak forward current

Reverse voltage

Power dissipation

Operating temperature

Storage temperature

Soldering temperature

*1

*2

*1 Pulse width 100

µ s, Duty ratio=0.01

GL496

GL496

50

87.5

-25 to + 85

-40 to + 90

*2 For MAX. 5 seconds at the position of 1.4 mm from the resin edge

1. High speed response (response frequency : 40MHz)

4. Lead bending type may be used.

1. AV equipment

2. Personal computers

3. Portable information terminal equipment

2. Peak emission wavelength

λ p : TYP. 880 mm

0.5

3. Half intensity angle

∆θ : ± 22˚

3.0

2-C0.5

R-1.25

(1.7)

0.45

(2.54)

1 Anode

2 Cathode

0.4

1.15

Transparent epoxy resin

1

2

1

2

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

s

s

s

s