TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

http://onsemi.com

4

0.5

1.0

2.0

7.0

0.3

3.0

5.0

0.7

Figure 4. Turn−Off Time

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

10

20

30

(PNP)

(NPN)

Figure 5. DC Current Gain

200

500

0.2

0.5

2.0

100

0.1

100

50

20

10

1.0

5.0

10

20

5.0

50

PNP

NPN

1000

2.0

1.0

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

not derate the same as thermal limitations.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current conditions during

reverse biased turn−off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 7 gives RBSOA characteristics.

7.0

20

1.0

50

100

0.2

0

0.5

SECONDARY BREAKDOWN

THERMAL LIMIT

BONDING WIRE LIMIT

1.0ms

dc

300 ms

2.0

1.0

100

30

10ms

Figure 6. Maximum Rated Forward Bias

Safe Operating Area

50

20

10

5.0

0.3

2.0 3.0

5.0

10

30

70

TIP35A, 36A

TIP35B, 36B

TIP35C, 36C

40

60

0

80

100

5.0

0

15

20

40

30

Figure 7. Maximum Rated Forward Bias

Safe Operating Area

25

10

10

20

30

50

70

90

TIP35A

TIP36A

TIP35B

TIP36B

TIP35C

TIP36C