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BC560C датащи(PDF) 2 Page - ON Semiconductor |
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BC560C датащи(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() BC560C http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −45 − − Vdc Collector−Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −30 Vdc, IE = 0, TA = +125°C) ICBO − − − − −15 −5.0 nAdc mAdc Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) IEBO − − −15 nAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −2.0 mAdc, VCE = −5.0 Vdc) hFE 100 380 270 500 − 800 − Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = (Note 1) (IC = −100 mAdc, IB = −5.0 mAdc, (Note 2) VCE(sat) − − − −0.075 −0.3 −0.25 −0.25 −0.6 − Vdc Base −Emitter Saturation Voltage (IC = −100 mAdc, IB = −5.0 mAdc) VBE(sat) − −1.1 − Vdc Base−Emitter On Voltage (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) (IC = −2.0 mAdc, VCE = −5.0 Vdc) VBE(on) − − −0.55 −0.52 −0.55 −0.62 − − −0.7 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT − 250 − MHz Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccbo − 2.5 − pF Small−Signal Current Gain (IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz) hfe 450 600 900 pF Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz) NF1 NF2 − − 0.5 − 2.0 10 dB 1. IB is value for which IC = −11 mA at VCE = −1.0 V. 2. Pulse test = 300 ms − Duty cycle = 2%. |
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