KSD-T0O058-000

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Thermal Characteristics

Characteristic

Symbol

Rating

Unit

Thermal resistance, junction to case

Max. 2.77

C/W

Thermal resistance, junction to ambient

Max. 62.5

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

600

-

-

V

Gate threshold voltage

2

-

4

V

Drain-source cut-off current

-

-

1

uA

-

-

100

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance

-

0.55

0.65



Forward transfer conductance

(Note 3)

-

10

-

S

Input capacitance

f=1.0MHz

-

2162

2882

pF

Output capacitance

-

183

244

Reverse transfer capacitance

-

14.6

19.4

Turn-on delay time

(Note 3, 4)

-

30

-

ns

Rise time

(Note 3, 4)

-

85

-

Turn-off delay time

(Note 3, 4)

-

140

-

Fall time

(Note 3, 4)

-

90

-

Total gate charge

(Note 3, 4)

-

41

63

nC

Gate-source charge

(Note 3, 4)

-

13

-

Gate-drain charge

(Note 3, 4)

-

10.5

-

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current (DC)

Integral reverse diode

in the MOSFET

-

-

13

A

Source current (Pulsed)

-

-

52

A

Forward voltage

-

-

1.4

V

Reverse recovery time

(Note 3, 4)

-

510

-

ns

Reverse recovery charge

(Note 3, 4)

-

4.3

-

uC

Note:

1. Repeated rating: Pulse width limited by safe operating area

3. Pulse test: Pulse width

≤300us, Duty cycle≤2%

4. Essentially independent of operating temperature typical characteristics

SMK1360FD