SC1205

HIGH SPEED SYNCHRONOUS POWER

MOSFET DRIVER

© 1999 SEMTECH CORP.

652 MITCHELL ROAD NEWBURY PARK CA 91320

PRELIMINARY - December 7, 1999

2

NOTE:

(1) Specification refers to application circuit in Figure 1.

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Conditions

Maximum

Units

V

V

MAX5V

7V

BST to PGND

VMAX

BST-PGND

30

V

BST to DRN

VMAX

BST-DRN

7V

DRN to PGND

VMAX

DRN-PGN

25

V

OVP_S to PGND

VMAX

OVP_S-PGND

10

V

Input pin

CO

-0.3 to 7.3

V

Continuous Power Dissipation

Pd

Tamb = 25°C, T

Tcase = 25°C, T

0.66

2.56

W

Thermal Resistance Junction to Case

θϑΧ

40

°C/W

Thermal Resistance Junction to

Ambient

θ

JA

150

°C/W

Operating Temperature Range

T

J

0 to +125

°C

Storage Temperature Range

T

STG

-65 to +150

°C

Lead Temperature (Soldering) 10 sec

T

LEAD

300

°C

ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS)

Unless specified: -0 <

θ

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

POWER SUPPLY

Supply Voltage

V

CC

V

CC

4.15

5

6.0

V

Quiescent Current, operating

Iq_op

V

1

ma

Quiescent Current

Iq_stby

EN = 0V

10

µA

UNDER-VOLTAGE LOCKOUT

Start Threshold

V

START

4.2

4.4

4.6

V

Hysteresis

Vhys

UVLO

0.05

V

Logic Active Threshold

V

ACT

1.5

V