-Jun-2006 Rev. B

Page 2 of 5

01

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Any changing of specification will not be informed individual

Electrical Characteristics ( Tj=25 C Unless otherwise specified)

o

Notes:

2.

Pulse width limited by safe operating area.

Pulse width 300us, dutycycle 2%.

≦

≦

1.

Total Gate Charge

Crss

Qg

Qgs

Qgd

Tr

Ciss

Coss

Tf

4.6

1.1

3

4.9

22.5

12.2

3.3

160

107

32

nC

nS

pF

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

f=1.0MHz

Ω

Ω

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

1

25

26

40

uA

uA

m

2

2

Parameter

Symbol

Max.

Typ.

Test Condition

Min.

Unit

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate-Source Leakage Current

Drain-Source Leakage Current (Tj=25 )

Static Drain-Source On-Resistance

Drain-Source Leakage Current(Tj=150 )

Ω

±

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

30

0.037

1.0

3.0

100

±

V

V/

o

V

nA

Source-Drain Diode

Parameter

Symbol

Max.

Typ.

Test Condition

Min.

Unit

Forward On Voltage

Continuous Source Current(Body Diode)

_

Pulsed Source Current(Body Diode)

_

A

A

15

50

_

_

V

1.3

o

2

1

_

_

Gfs

16

Forward Transconductance

_

_

S

Elektronische Bauelemente

SSD3055

N-Channel Enhancement Mode Power Mos.FET

Ω