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MMDT2907A датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали MMDT2907A
подробное описание детали  PNP Silicon Multi-Chip Transistor
PDF  3 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMDT2907A датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
MMDT2907A
PNP Silicon
Multi-Chip Transistor
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, Collector Current (mA)
0.3
0.5
0.7
1.0
3.0
0.2
–0.1
TJ = 125°C
25
°C
–55
°C
VCE = –1.0 V
VCE = –10 V
2.0
–0.2
–0.3
–0.5 –0.7
–1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70
–100
–200
–300
–500
Figure 4. Collector Saturation Region
IB, Base Current (mA)
–0.4
–0.6
–0.8
–1.0
–0.2
0
IC = –1.0 mA
–0.005
–10 mA
–0.01
–100 mA
–500 mA
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0 –10
–20
–30
–50
Figure 5. Turn–On Time
IC, Collector Current
300
–5.0
Figure 6. Turn–Off Time
IC, Collector Current (mA)
–5.0
200
100
70
50
30
20
10
7.0
5.0
3.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300
–500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = –30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
200
tf
t
′s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jan-2006 Rev. B
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