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MMBT3906 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали MMBT3906
подробное описание детали  -200 mA, -40 V PNP Plastic Encapsulated Transistor
PDF  5 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT3906 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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MMBT3906
-200 mA, -40 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
30-Aug-2010 Rev. D
Page 2 of 5
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(3)
V(BR)CEO
-40
-
Vdc
IC= -1mAdc, IB=0
Collector-Base Breakdown Voltage
V(BR)CBO
-40
-
Vdc
IC = -10μAdc, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
-
Vdc
IE = -10μAdc, IC=0
Base Cut-Off Current
IBL
-
-50
nAdc
VCE= -30Vdc, VEB= -3.0Vdc
Collector Cut-Off Current
ICEX
-
-50
nAdc
VCE= -30Vdc, VEB= -3.0Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
hFE(1)
60
-
IC= -0.1mAdc, VCE= -1Vdc
hFE(2)
80
-
IC= -1.0mAdc, VCE= -1Vdc
hFE(3)
100
300
IC= -10mAdc, VCE= -1Vdc
hFE(4)
60
-
IC= -50mAdc, VCE= -1Vdc
hFE(5)
30
-
IC= -100mAdc, VCE= -1Vdc
Collector-Emitter Saturation Voltage
(3)
VCE(sat)
-
-0.25
Vdc
IC= -10mAdc, IB = -1mAdc
-
-0.4
IC = -50mAdc, IB = -5mAdc
Base-Emitter Saturation Voltage
(3)
VBE(sat)
-0.65
-0.85
Vdc
IC= -10mAdc, IB = -1mAdc
-
-0.95
IC = -50mAdc, IB = -5mAdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
250
-
MHz
IC= -10mAdc, VCE= -20Vdc, f=100MHz
Output Capacitance
Cobo
-
4.5
pF
VCB= -5.0Vdc, IE=0, f=1.0MHz
Input Capacitance
Cibo
-
10
pF
VEB= -0.5Vdc, IC=0, f=1.0MHz
Input Impedance
hie
2.0
12
kΩ
VCE= -10 Vdc, IC= -1.0mAdc, f=1.0kHz
Voltage Feedback Radio
hre
0.1
10
x 10
-4
VCE= -10 Vdc, IC= 1.0mAdc, f=1.0kHz
Small-Signal Current Gain
hfe
100
400
VCE= -10 Vdc, IC= 1.0mAdc, f=1.0kHz
Output Admittance
Hoe
3.0
60
μmhos VCE= -10 Vdc, IC= 1.0mAdc, f=-1.0kHz
Noise Figure
NF
-
4.0
dB
VCE= -5.0 Vdc, IC= -100μAdc, RS=1.0KΩ,
f=1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
-
35
nS
VCC=-3Vdc,VBE=0.5Vdc
IC=-10mAdc, IB1 =-1mAdc
Rise Time
tr
-
35
Storage Time
ts
-
225
VCC=-3Vdc,
IC=-10mAdc,IB1= IB2=-1mAdc
Fall Time
tf
-
75
NOTE:
1.
FR-5=1.0 x 0.75 x 0.062 in.
2.
Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.
Pulse Test: Pulse Width ≦ 300μS, Duty Cycle ≦ 2.0%



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