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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PG03JSUSC датащи(PDF) 1 Page - KEC(Korea Electronics) |
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PG03JSUSC датащи(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2008 .9. 11 1/2 SEMICONDUCTOR TECHNICAL DATA PG03JSUSC Single Line TVS Diode for ESD Protection in Portable Electronics Revision No : 2 Protection in Portable Electronics Applications. FEATURES ・350 Watts peak pulse power (tp=8/20μs) ・Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 34A(tp=8/20μ s) ・Small package for use in portable electronics. ・Suitable replacement for Multi-Layer Varistors in ESD protection applications. ・Protects on I/O or power line. ・Low clamping voltage. ・Low leakage current. APPLICATIONS ・Cell phone handsets and accessories. ・Microprocessor based equipment. ・Personal digital assistants (PDA’s) ・Notebooks, desktops, & servers. ・Portable instrumentation. ・Pagers peripherals. MAXIMUM RATING (Ta=25℃) USC DIM MILLIMETERS A B C D E F G H J K 2.50 0.1 1.25 0.05 0.90 0.05 0.30+0.06/-0.04 1.70 0.05 MIN 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 L M4~6 I 1.0 MAX M M I C J G D 2 1 B 1. ANODE 2. CATHODE H + _ + _ + _ + _ + _ + _ + _ ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power (tp=8/20μ s) PPK 350 W Peak Pulse Current (tp=8/20μ s) IPP 34 A Operating Temperature Tj -55～150 ℃ Storage Temperature Tstg -55～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 3.3 V Reverse Breakdown Voltage VBR It=1mA 4.0 - - V Reverse Leakage Current IR VRWM=3.3V - - 125 μ A Clamping Voltage VC IPP=5A, tp=8/20μs - - 8.8 V IPP=34A, tp=8/20μs - - 10.9 Junction Capacitance CJ VR=0V, f=1MHz - - 500 pF Marking CATHODE MARK 21 21 3J Type Name Lot No. |
Аналогичный номер детали - PG03JSUSC |
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Аналогичное описание - PG03JSUSC |
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ссылки URL |
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