2010. 8. 12

2/7

KF12N60P/F

Revision No : 3

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

600

-

-

V

Breakdown Voltage Temperature Coefficient

-

0.63

-

V/

℃

Drain Cut-off Current

-

-

10

μA

Gate Threshold Voltage

2.5

-

4.5

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

0.51

0.6

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

36

-

nC

Gate-Source Charge

-

8.5

-

Gate-Drain Charge

-

13.5

-

Turn-on Delay time

(Note4,5)

-

30

-

ns

Turn-on Rise time

-

40

-

Turn-off Delay time

-

115

-

Turn-off Fall time

-

55

-

Input Capacitance

-

1700

-

pF

Output Capacitance

-

185

-

Reverse Transfer Capacitance

-

20

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

12

A

Pulsed Source Current

-

-

48

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/

μs

-

370

-

ns

Reverse Recovery Charge

-

4.6

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

Marking