STT3962N datasheet(1/4 Pages) SECOS

номер детали	STT3962N

подробное описание детали	N-Channel Enhancement Mode Mos.FET

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

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STT3962N

N-Channel Enhancement Mode Mos.FET

2.3 A, 60 V, RDS(ON) 0.153 

Elektronische Bauelemente

20-Aug-2010 Rev. B

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize High Cell Density

process. Low RDS(on) assures minimal power loss and conserves

energy, making this device ideal for use in power management

circuitry. Typical applications are DC-DC converters, power

management in portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES



Low RDS(on) provides higher efficiency and extends battery life.



Miniature TSOP-6 surface mount package saves board space.

PRODUCT SUMMARY

VDS(V)

RDS(on) (

ID(A)

60

0.153@VGS= 10V

2.3

0.185@VGS= 4.5V

2.1

ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Ratings

Unit

Maximum

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

a

ID @TA=25℃

ID @TA=70℃

2.3

A

1.9

Pulsed Drain Current

b

IDM

8

A

Continuous Source Current (Diode Conduction)

a

IS

1.05

A

Power Dissipation

a

PD @TA=25℃

1.15

W

PD @TA=70℃

0.7

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum

Unit

Maximum Junction to Ambient

a

t ≦ 10 sec

RJA

100

°C / W

Steady State

166

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature.

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.70

3.10

G

0

0.10

B

2.60

3.00

H

0.60 REF.

C

1.40

1.80

J

0.12 REF.

D

1.10 MAX.

K

0°

10°

E

1.90 REF.

L

0.95 REF.

F

0.30

0.50

TSOP-6

B

L

F

H

C

J

D G

K

A

E

1

23

4

5

6

G

S

D

Аналогичный номер детали - STT3962N

производитель	номер детали	датащи	подробное описание детали
VBsemi Electronics Co.,...	STT3962N	397Kb / 7P	N-Channel 60 V (D-S) MOSFET
SeCoS Halbleitertechnol...	STT3962NE	104Kb / 2P	2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STT3962NE	519Kb / 9P	Dual N-Channel 60 V (D-S) MOSFET
SeCoS Halbleitertechnol...	STT3962NE	104Kb / 2P	N-Channel Enhancement Mode MOSFET
SeCoS Halbleitertechnol...	STT3962N	443Kb / 4P	N-Channel Enhancement Mode Mos.FET

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