SSY5829P datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSY5829P

-2.5 A, -20 V, RDS(ON) 0.110 

P-Channel Enhancement MOSFET

With Schottky Diode

14-Jan-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

-0.4

VDS = VGS, ID = -250μA

Gate-Body Leakage

IGSS

±100

VDS = 0V, VGS= ±8V

-1

VDS = -16V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-10

μA

VDS = -16V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(ON)

-5

VDS = -5V, VGS= -4.5V

0.110

VGS= -4.5V, ID = -3.6A

Drain-Source On-State Resistance

RDS(ON)

0.160

Ω

VGS= -2.5V, ID = -3.0A

Forward Transconductance

gFS

VDS= -5V,,ID = -3.6A

Diode Forward Voltage

VSD

-0.70

IS= -1.6A, VGS=0V

Dynamic

Total Gate Charge

6.0

Gate-Source Charge

Qgs

0.80

Gate-Drain Charge

Qgd

1.30

ID= -3.6A

VDS= -5V

VGS= -4.5V

Turn-On Delay Time

Td(ON)

6.5

Rise Time

Turn-Off Delay Time

Td(OFF)

Fall Time

VDD= -5V

VGEN= -4.5V

RG= 6Ω

RL= 5Ω

SCHOTTKY

SPECIFICATIONS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

0.48

IF= 0.5A

Forward Voltage Drop

0.4

IF= 0.5A, TJ=125°C

0.1

Vr= 30V

Vr= 30V, TJ=75°C

Maximum Reverse Leakage Current

IRM

Vr= 30V, TJ=125°C

Junction Capacitance

Vr= 10V

Notes:

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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