SSM452

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

24-Jun-2010 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSM452 provide the designer with the best combination of

fast switching, low on-resistance and cost-effectiveness.

FEATURES



Simple Drive Requirement



Lower On-resistance



Fast Switching

MARKING

PARAMETER

SYMBOL

RATING

UNIT

Drain – Source Voltage

-30

V

Gate – Source Voltage

±20

V

Continuous Drain Current

3

-6.0

A

-4.8

A

Pulsed Drain Current

1

-20

A

Total Power Dissipation

2.7

W

Linear Derating Factor

0.02

W / °C

Operating Junction & Storage Temperature

Range

-55 ~ 150

°C

THERMAL DATA

Maximum Junction–Ambient

3

45

°C / W

SOT-223

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

6.20

6.70

G

-

0.10

B

6.70

7.30

H

-

-

C

3.30

3.70

J

0.25

0.35

D

1.42

1.90

K

-

-

E

4.50

4.70

L

2.30 REF.

F

0.60

0.82

M

2.90

3.10

Top View

1

2

3

4

A

M

B

D

L

K

F

G

H

J

E

C



Gate



Source



Drain