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SSG4953 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SSG4953
подробное описание детали  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4953 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-30
-0.1
-1.0
-
2.5
100
-1
-25
53
90
11.7
2.1
2.9
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-15V
f=1.0MHz
VDD=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
Ω
Ω
ID=-5A
VDS=-15V
VGS=-10V
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VGS=0V, ID=-250uA
VGS= 20V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Forward Transconductance
Gfs
S
5
VDS=-5V, ID=-5A
_
_
_
o
C
o
C
o
C
o
2
2
2
9
10
37
23
582
125
86
__
_
_
_
_
_
_
_
Reference to 25 ,ID=-1mA
23-Jun-2010 Rev. D
Page
2 of 4
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
IS=1.7A, VGS=0V.
V
-1.2
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
Reverse Recovery Time
Reverse Recovery Charge
Is=-5A, V GS=0V
_
_
_
_
Trr
Qrr
nC
nS
24
19
dl/dt=100A/uS
3.Surface mounted on 1 in copper pad of FR4 board; 135OC/W when mounted on min. copper pad.
2
2
2
Elektronische Bauelemente
SSG4953
-5A, -30V,RDS(ON) 53m
P-Channel Enhancement Mode Power Mos.FET
Ω
C
o



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