SSG4874N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4874N

16.8 A, 30 V, RDS(ON) 9 m

N-Channel Mode Power MOSFET

31-Dec-2010 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

1.5

VDS= VGS, ID= 250μA

Gate-Body Leakage Current

IGSS

1.2

100

VDS= 0V, VGS= 20V

μA

VDS= 24V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

μA

VDS= 24V, VGS= 0V, TJ= 55°C

On-State Drain Current

ID(on)

VDS= 5V, VGS= 10V

VGS= 10V, ID= 16.8A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= 4.5V, ID= 16.1A

Forward Transconductance

gfs

VDS= 15V, ID= 16.8A

Diode Forward Voltage

VSD

0.7

IS= 2.3A, VGS= 0V

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

ID= 16.8A

VDS= 15V

VGS= 4.5V

Input Capacitance

Ciss

1642

4000

Output Capacitance

Coss

579

2000

Reverse Transfer Capacitance

Crss

279

600

VDS= 15V

VGS= 0V

f= 1MHz

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

110

Fall Time

VDD= 15V

ID= 1A

VGEN= 10V

RL= 6Ω

Notes:

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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