Elektronische Bauelemente

SSG4228

Dual-N Enhancement Mode Power MOSFET

18-Feb-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Static

Drain-Source Breakdown Voltage

30

-

-

V

Breakdown Voltage Temp.

Coefficient

BV

△

-

0.03

-

Gate-Threshold Voltage

1

-

3

V

Gate-Body Leakage

-

-

±100

nA

-

-

1

μA

Zero Gate Voltage Drain Current

-

-

25

μA

-

-

26

Drain-Source On-Resistance

2

-

-

40

mΩ

Total Gate Charge

2

-

9

15

Gate-Source Charge

-

2

-

Gate-Drain (“Miller”) Charge

-

6

-

nC

Turn-On Delay Time

2

-

10

-

Rise Time

-

9

-

Turn-Off Delay Time

-

18

-

Fall Time

-

6

-

nS

Input Capacitance

-

580

930

Output Capacitance

-

150

-

Reverse Transfer Capacitance

-

108

-

pF

f=1.0MHz

Forward Transfer Conductance

-

15

-

S

Source-Drain Diode

Forward On Voltage

2

-

-

1.3

V

Reverse Recovery Time

2

-

15

-

nS

Reverse Recovery Charge

-

9

-

nC

dl/dt=100A/μs

Notes:

1

Pulse width limited by Max. junction temperature.

2

Pulse width 300us, duty cycle 2%.

3

Surface mounted on 1 inch2 copper pad of FR4 board; 135°C/W when mounted on min. copper pad.