SS8550T datasheet(1/2 Pages) SECOS

номер детали	SS8550T

подробное описание детали	PNP Silicon General Purpose Transistor

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

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Any changing of specification will not be informed individual

SS8550T

PNP Silicon

General Purpose Transistor

Power dissipation

PCM : 1 W

Collector Current

ICM : -1.5 A

Collector-base voltage

FEATURES

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -100

μA， IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= -0.1mA

， IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100

μA， IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40 V ,

IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V ,

IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V ,

IC=0

-0.1

μA

HFE(1)

VCE=-1V,

IC= -100m A

85

400

DC current gain

HFE(2)

VCE=-1V,

IC= -800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-800 mA, IB=-80m A

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-800 mA, IB=-80m A

-1.2

V

Transition frequency

fT

VCE=-10V,

IC= -50mA

f=30MHz

100

MHz

CLASSIFICATION OF hFE(1)

Rank

B

C

D

E

Range

85-160

120-200

160-300

300-400

ELECTRICAL CHARACTERISTICS ( Tamp.=25

OC unless otherwise specified)

V(BR)CBO : - 40 V

Operating & storage junction temperature

Tj, Tstg : - 55

O

C ~ + 150

O

C

1 2

TO-92

1. EMITTER

2. BASS

.

COLLECTOR

1

2

3

2

1

3

01-Jun-2002 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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