IRFN340SMD datasheet(2/2 Pages) SEME-LAB

2 / 2 page

IRFN340SMD

Prelim. 7/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS = 0

ID = 1mA

Reference to 25°C

ID = 1mA

VGS = 10V

ID = 6A

VGS = 10V

ID = 10A

VDS = VGS

ID = 250mA

VDS ³ 15V

IDS = 6A

VGS = 0

VDS = 0.8BVDSS

TJ = 125°C

VGS = 20V

VGS = –20V

VGS = 0

VDS = 25V

f = 1MHz

VGS = 10V

ID = 10A

VDS = 0.5BVDSS

VDD = 200V

ID = 10A

RG = 9.1W

VGS = 10V

IS = 10A

TJ = 25°C

VGS = 0

IF = 10A

TJ = 25°C

di / dt £ 100A/msVDD £ 50V

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance4

Gate Threshold Voltage

Forward Transconductance4

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 1

Gate – Source Charge 1

Gate – Drain (“Miller”) Charge 1

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Pulse Source Current 1

Diode Forward Voltage4

Reverse Recovery Time4

Reverse Recovery Charge4

Forward Turn–On Time

400

0.46

0.55

0.70

4.9

250

100

–100

1400

3500

2300

2.2

10.0

13.8

40.5

2.5

1.5

600

5.6

Negligible

2.0

6.5

V/°C

BVDSS

DBVDSS

DTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

ISM

VSD

trr

Qrr

ton

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance (from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

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