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IRFN150SMD датащи(PDF) 2 Page - Seme LAB

номер детали IRFN150SMD
подробное описание детали  N-CHANNEL POWER MOSFET
PDF  2 Pages
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производитель  SEME-LAB [Seme LAB]
домашняя страница  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRFN150SMD датащи(HTML) 2 Page - Seme LAB

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IRFN150SMD
Prelim.7/00
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 19A
VGS = 10V
ID = 27A
VDS = VGS
ID = 250mA
VDS ³ 15V
IDS = 19A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 27A
VDS = 0.5BVDSS
ID = 27A
VDS = 0.5BVDSS
VDD = 50V
ID = 27A
RG = 2.35W
IS = 27A
TJ = 25°C
VGS = 0
IF = 27A
TJ = 25°C
di / dt £ 100A/msVDD £ 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
100
0.13
0.070
0.081
24
9
25
250
100
–100
3700
1100
200
50
125
822
15
65
35
190
170
130
27
108
1.8
500
2.9
Negligible
0.8
2.8
V
V/°C
W
V
S(
W
mA
nA
pF
nC
nC
ns
A
V
ns
mC
nH
BVDSS
DBVDSS
DTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
£ 300ms, d£ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS



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