IRFN044SMD

Prelim. 7/00

LAB

SEME

Website: http://www.semelab.co.uk

Gate – Source Voltage

Continuous Drain Current

Continuous Drain Current

Linear Derating Factor

dv/dt

Operating and Storage Temperature Range

Package Mounting Surface Temperature (for 5 sec)

Thermal Resistance Junction to Case

Thermal Resistance Junction to PCB (Typical)

±20V

34A

21A

136A

75W

0.6W/°C

340mJ

4.5V/ns

–55 to 150°C

300°C

1.67°C/W

4°C/W

MECHANICAL DATA

3. 60 ( 0. 142)

Ma x .

3. 70 ( 0. 146)

3. 41 ( 0. 134)

3. 70 ( 0. 146)

3. 41 ( 0. 134)

0. 89

( 0 . 035)

mi n .

9. 67 ( 0. 381)

9. 38 ( 0. 369)

11. 58 ( 0 . 4 56)

11. 28 ( 0 . 4 44)

0. 50 ( 0. 020 )

0. 26 ( 0. 010 )

13

2

N–CHANNEL

POWER MOSFET

FEATURES

• HERMETICALLY SEALED SURFACE

MOUNT PACKAGE

• SMALL FOOTPRINT – EFFICIENT USE OF

PCB SPACE.

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• HIGH PACKING DENSITIES

SMD1

Pad 1 – Source

Pad 2 – Drain

Pad 3 – Gate

Note:

IRFxxxSM also available with

pins 1 and 3 reversed.

Notes

1) Pulse Test: Pulse Width

£ 300ms, d£ 2%

60V

34A

0.040

W

W

W

W