SMG2343PE datasheet(2/4 Pages) SECOS

номер детали	SMG2343PE

подробное описание детали	P-Channel Enhancement MOSFET

PDF	4 Pages

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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SMG2343PE

-3.6 A, -30 V, RDS(ON) 57 m

P-Channel Enhancement MOSFET

Elektronische Bauelemente

12-Nov-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

PARAMETER

SYMBO MIN TYP MAX UNIT

TEST CONDITIONS

Static

Gate-Threshold Voltage

VGS(th)

-0.8

VDS = VGS, ID = -250μA

Gate-Body Leakage

IGSS

±100

VDS = 0V, VGS= ±8V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS = -24V, VGS= 0V

-10

VDS = -24V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(ON)

-2

VDS = -5V, VGS= -4.5V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -10V, ID = -3.6A

VGS= -4.5V, ID = -2.8A

Forward Transconductance

gFS

VDS= -5V,,ID = -3.6A

Diode Forward Voltage

VSD

-0.7

IS= -0.4A, VGS= 0V

Dynamic

Total Gate Charge

ID= -3.6A

VDS= -10V

VGS= -5V

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

2.5

Turn-On Delay Time

Td(on)

ID= -1A, VDS= -15V

VGEN= -10V

RG= 50Ω

Rise Time

2.8

Turn-Off Delay Time

Td(off)

53.6

Fall Time

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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