Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Drain to Case Capacitance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

IRF9130

Prelim. 10/99

–100

–0.087

0.3

0.35

–2

–4

3

–25

–250

–100

100

12

860

350

125

15

29

1.0

7.1

2.0

21

60

140

140

140

–11

–50

–4.7

250

3.0

Negligible

5.0

13

1.67

0.12

30

Reference to 25°C

f = 1MHz

V

V/ °C

W

V

S (

É)

mA

nA

pF

nC

ns

A

V

ns

mC

nH

°C/W

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d £ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Thermal Resistance Junction – Case

Thermal Resistance Case – Sink

Thermal Resistance Junction – Ambient

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS