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SEF101MH датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SEF101MH
подробное описание детали  1.0 Amp High Efficiency Recovery Rectifiers
PDF  3 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SEF101MH датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SEF101MH Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SEF101MH Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SEF101MH Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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SEF101MH~SEF107MH
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
Elektronische Bauelemente
09-Feb-2011 Rev. A
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Part Number
Unit
Testing
Condition
SEF
101
MH
SEF
102
MH
SEF
103
MH
SEF
104
MH
SEF
105
MH
SEF
106
MH
SEF
107
MH
Forward Voltage (Max.)
VF
1
1.3
1.7
V
Average Forward
Rectified Current (Max.)
IO
1
A
Ambient
Temperature =50°C
Forward Surge Current
IFSM
25
A
8.3ms single half
sine-wave
superimposed on
rated load (JEDEC
method)
DC Reverse Current at
Rated DC Blocking Voltage (Max.)
IR
5
A
VR=VRRM, TA=25°C
150
VR=VRRM,TA=100°C
Thermal Resistance
Junction to Ambient (Typ.)
RJA
42
°C/W
Diode Junction Capacitance (Typ.)
CJ
70
pF
f=1MHz and applied
4V DC reverse voltage
Storage and Operating
Temperature Range
TSTG, TJ
-65 ~ 175, -55 ~ 150
°C
Reverse recovery time
TRR
50
75
nS



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